IRLR110PBFVishay Siliconix
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    • Manufacturer No：
      IRLR110PBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      236127
    • Description：
      Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
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    Inventory:370
    • Qty Unit Price price
    • 1 $1802.329 $1802.329
    • 10 $1784.484 $17844.84
    • 100 $1766.815 $176681.5
    • 1000 $1749.321 $1749321
    • 10000 $1732 $17320000

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    • Manufacturer No：
      IRLR110PBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLR110PBF
    • SKU：
      236127
    • Description：
      Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

    User Guide

    User Guide

    IRLR110PBF Details

    Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

    IRLR110PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • Drain to Source Voltage (Vdss): 100V
    • Max Operating Temperature: 150°C
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Height: 2.39mm
    • FET Type: N-Channel
    • Power Dissipation: 25W
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Current Rating: 4.3A
    • Turn-Off Delay Time: 16 ns
    • Vgs(th) (Max) @ Id: 2V @ 250μA
    • Supplier Device Package: D-Pak
    • Input Capacitance: 250pF
    • Drain to Source Resistance: 540mOhm
    • Drive Voltage (Max Rds On,Min Rds On): 4V 5V
    • Power Dissipation-Max: 2.5W Ta 25W Tc
    • Rise Time: 47ns
    • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Min Operating Temperature: -55°C
    • Packaging: Tube
    • Voltage - Rated DC: 100V
    • Drain to Source Breakdown Voltage: 100V
    • Published: 2008
    • Gate to Source Voltage (Vgs): 10V
    • Threshold Voltage: 2V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Length: 6.73mm
    • Width: 6.22mm
    • Continuous Drain Current (ID): 4.3A
    • Fall Time (Typ): 17 ns
    • Vgs (Max): ±10V
    • Weight: 1.437803g
    • Turn On Delay Time: 9.3 ns
    • Resistance: 540mOhm
    • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
    • Current - Continuous Drain (Id) @ 25°C: 4.3A Tc
    • Rds On Max: 540 mΩ
    • Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
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