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  • Manufacturer No:
    SI7615ADN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    237194
  • Description:
    MOSFET P-CH 20V 35A 1212-8S
  • Quantity:
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Inventory:64664
  • Qty Unit Price price
  • 1 $1046.85 $1046.85
  • 10 $1036.485 $10364.85
  • 100 $1026.222 $102622.2
  • 1000 $1016.061 $1016061
  • 10000 $1006 $10060000

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  • Manufacturer No:
    SI7615ADN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7615ADN-T1-GE3
  • SKU:
    237194
  • Description:
    MOSFET P-CH 20V 35A 1212-8S

SI7615ADN-T1-GE3 Details

MOSFET P-CH 20V 35A 1212-8S

SI7615ADN-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Published: 2013
  • Peak Reflow Temperature (Cel): 260
  • Terminal Finish: Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s): 40
  • Factory Lead Time: 14 Weeks
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Terminal Form: C BEND
  • Drain Current-Max (Abs) (ID): 35A
  • Width: 3.4mm
  • Rise Time: 40 ns
  • Drain to Source Breakdown Voltage: -20V
  • Series: TrenchFET?
  • Fall Time (Typ): 26 ns
  • Turn-Off Delay Time: 85 ns
  • Package / Case: PowerPAK? 1212-8
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 10V
  • Threshold Voltage: -400mV
  • Power Dissipation-Max: 3.7W Ta 52W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • REACH SVHC: No SVHC
  • Number of Terminations: 5
  • Gate to Source Voltage (Vgs): 12V
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Length: 3.4mm
  • FET Type: P-Channel
  • Turn On Delay Time: 13 ns
  • Height: 1.12mm
  • Vgs (Max): ±12V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Power Dissipation: 3.7W
  • Current - Continuous Drain (Id) @ 25°C: 35A Tc
  • Avalanche Energy Rating (Eas): 20 mJ
  • Resistance: 4.4mOhm
  • JESD-30 Code: S-PDSO-C5
  • Rds On (Max) @ Id, Vgs: 4.4m Ω @ 20A, 10V
  • Continuous Drain Current (ID): -22.1A

Excellent

Based on reviews

Excellent

Based on reviews

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