SI7615ADN-T1-GE3
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Channels
1ECCN Code
EAR99Radiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeNumber of Pins
8Terminal Position
DUALPublished
2013REACH SVHC
No SVHCPeak Reflow Temperature (Cel)
260Number of Terminations
5Terminal Finish
Matte Tin (Sn)Gate to Source Voltage (Vgs)
12VTime@Peak Reflow Temperature-Max (s)
40Max Junction Temperature (Tj)
150°CFactory Lead Time
14 WeeksTransistor Element Material
SILICONElement Configuration
SingleDrain to Source Voltage (Vdss)
20VOperating Temperature
-55°C~150°C TJTechnology
MOSFET (Metal Oxide)Transistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODETerminal Form
C BENDCase Connection
DRAINDrain Current-Max (Abs) (ID)
35ALength
3.4mmWidth
3.4mmFET Type
P-ChannelRise Time
40 nsTurn On Delay Time
13 nsDrain to Source Breakdown Voltage
-20VHeight
1.12mmSeries
TrenchFET?Vgs (Max)
±12VFall Time (Typ)
26 nsVgs(th) (Max) @ Id
1.5V @ 250μATurn-Off Delay Time
85 nsPower Dissipation
3.7WPackage / Case
PowerPAK? 1212-8Current - Continuous Drain (Id) @ 25°C
35A TcDrive Voltage (Max Rds On,Min Rds On)
2.5V 10VAvalanche Energy Rating (Eas)
20 mJThreshold Voltage
-400mVResistance
4.4mOhmPower Dissipation-Max
3.7W Ta 52W TcJESD-30 Code
S-PDSO-C5Gate Charge (Qg) (Max) @ Vgs
183nC @ 10VRds On (Max) @ Id, Vgs
4.4m Ω @ 20A, 10VInput Capacitance (Ciss) (Max) @ Vds
5590pF @ 10VContinuous Drain Current (ID)
-22.1A