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SI7106DN-T1-GE3123
  • Manufacturer No:
    SI7106DN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    270928
  • Description:
    MOSFET 20V 19.5A 3.8W 6.2mohm @ 4.5V
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Inventory:672
  • Qty Unit Price price
  • 1 $1.564 $1.564
  • 10 $1.548 $15.48
  • 100 $1.532 $153.2
  • 1000 $1.516 $1516
  • 10000 $1.5 $15000

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SI7106DN-T1-GE3
  • Manufacturer No:
    SI7106DN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7106DN-T1-GE3
  • SKU:
    270928
  • Description:
    MOSFET 20V 19.5A 3.8W 6.2mohm @ 4.5V

SI7106DN-T1-GE3 Details

MOSFET 20V 19.5A 3.8W 6.2mohm @ 4.5V

SI7106DN-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Pin Count: 8
  • Termination: SMD/SMT
  • Number of Terminations: 5
  • Gate to Source Voltage (Vgs): 12V
  • Factory Lead Time: 14 Weeks
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Dual Supply Voltage: 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Length: 3.3mm
  • Pulsed Drain Current-Max (IDM): 60A
  • Fall Time (Typ): 15 ns
  • Series: TrenchFET?
  • Subcategory: FET General Purpose Powers
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • Resistance: 6.2MOhm
  • Power Dissipation-Max: 1.5W Ta
  • Avalanche Energy Rating (Eas): 45 mJ
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 6.2m Ω @ 19.5A, 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Peak Reflow Temperature (Cel): 260
  • Terminal Finish: Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2009
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Power Dissipation: 1.5W
  • Terminal Form: C BEND
  • Turn-Off Delay Time: 50 ns
  • Width: 3.3mm
  • Turn On Delay Time: 25 ns
  • Rise Time: 15 ns
  • Vgs (Max): ±12V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Height: 1.04mm
  • Continuous Drain Current (ID): 19.5A
  • Package / Case: PowerPAK? 1212-8
  • JESD-30 Code: S-XDSO-C5
  • Current - Continuous Drain (Id) @ 25°C: 12.5A Ta

Excellent

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Excellent

Based on reviews

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