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  • Manufacturer No:
    SI4850EY-T1-GE3
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    237305
  • Description:
    SI4850EY-T1-GE3 N-channel MOSFET Transistor; 8.5 A; 60 V; 8-Pin SOIC
  • Quantity:
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Inventory:4902
  • Qty Unit Price price
  • 1 $284.087 $284.087
  • 10 $281.274 $2812.74
  • 100 $278.489 $27848.9
  • 1000 $275.731 $275731
  • 10000 $273 $2730000

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  • Manufacturer No:
    SI4850EY-T1-GE3
  • Manufacturer:
    Vishay
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI4850EY-T1-GE3
  • SKU:
    237305
  • Description:
    SI4850EY-T1-GE3 N-channel MOSFET Transistor; 8.5 A; 60 V; 8-Pin SOIC

SI4850EY-T1-GE3 Details

SI4850EY-T1-GE3 N-channel MOSFET Transistor; 8.5 A; 60 V; 8-Pin SOIC

SI4850EY-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Pin Count: 8
  • Published: 2013
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 60V
  • Threshold Voltage: 3V
  • Transistor Element Material: SILICON
  • Length: 5mm
  • Width: 4mm
  • Drain Current-Max (Abs) (ID): 6A
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Rise Time: 10 ns
  • Turn-Off Delay Time: 25 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Nominal Vgs: 3 V
  • Subcategory: FET General Purpose Powers
  • Drain-source On Resistance-Max: 0.022Ohm
  • Current - Continuous Drain (Id) @ 25°C: 6A Ta
  • Rds On (Max) @ Id, Vgs: 22m Ω @ 6A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Factory Lead Time: 14 Weeks
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Continuous Drain Current (ID): 6A
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Height: 1.5mm
  • Turn On Delay Time: 10 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Fall Time (Typ): 12 ns
  • Series: TrenchFET?
  • Power Dissipation: 3.3W
  • Weight: 506.605978mg
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Power Dissipation-Max: 1.7W Ta

Vishay — Manufacturer Introduction

Vishay Intertechnology is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Vishay has grown through acquisitions to include such top names as Dale, Sfernice, Draloric, Sprague, Vitramon, Siliconix, General Semiconductor, BCcomponents, and Beyschlag. Vishay's portfolio of brands represents an unmatched collection of discrete semiconductors and passive components. All of these brands and products are part of one global manufacturer: Vishay.

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