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- Manufacturer No：SI4894BDY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4894BDY-T1-GE3
- SKU：254069
- Description：Trans Mosfet N-ch 30V 8.9A 8-PIN SOIC N T/r
User Guide
User Guide
SI4894BDY-T1-GE3 Details
Trans Mosfet N-ch 30V 8.9A 8-PIN SOIC N T/r
SI4894BDY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Published: 2015
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Length: 5mm
- Drain to Source Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Continuous Drain Current (ID): 12A
- Vgs (Max): ±20V
- Rise Time: 10 ns
- Height: 1.55mm
- Turn On Delay Time: 13 ns
- Series: TrenchFET?
- Subcategory: FET General Purpose Powers
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Rds On (Max) @ Id, Vgs: 11m Ω @ 12A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Threshold Voltage: 3V
- REACH SVHC: Unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Fall Time (Typ): 10 ns
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Power Dissipation: 1.4W
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Turn-Off Delay Time: 33 ns
- Weight: 186.993455mg
- Power Dissipation-Max: 1.4W Ta
- Current - Continuous Drain (Id) @ 25°C: 8.9A Ta
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