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- Manufacturer No：SI4214DDY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4214DDY-T1-GE3
- SKU：242332
- Description：MOSFET 2N-CH 30V 8.5A 8-SOIC
User Guide
User Guide
SI4214DDY-T1-GE3 Details
MOSFET 2N-CH 30V 8.5A 8-SOIC
SI4214DDY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Threshold Voltage: 2.5V
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Power Dissipation: 2W
- Drain to Source Voltage (Vdss): 30V
- Drain Current-Max (Abs) (ID): 7.5A
- Operating Temperature: -55°C~150°C TJ
- Height: 1.75mm
- Operating Mode: ENHANCEMENT MODE
- Turn-Off Delay Time: 15 ns
- Turn On Delay Time: 7 ns
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Continuous Drain Current (ID): 8.5A
- Terminal Finish: PURE MATTE TIN
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Length: 5mm
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Transistor Application: SWITCHING
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 12 ns
- Rise Time: 45 ns
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- FET Type: 2 N-Channel (Dual)
- Max Power Dissipation: 3.1W
- Weight: 506.605978mg
- Resistance: 19.5mOhm
- Rds On (Max) @ Id, Vgs: 19.5m Ω @ 8A, 10V
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