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- Manufacturer No：SI7913DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI7913DN-T1-GE3
- SKU：244025
- Description：MOSFET 2P-CH 20V 5A PPAK 1212-8
User Guide
User Guide
SI7913DN-T1-GE3 Details
MOSFET 2P-CH 20V 5A PPAK 1212-8
SI7913DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Pins: 8
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Drain Current-Max (Abs) (ID): 5A
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Width: 3.05mm
- Turn On Delay Time: 20 ns
- Rise Time: 70 ns
- Max Power Dissipation: 1.3W
- FET Feature: Logic Level Gate
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Height: 1.04mm
- Resistance: 37mOhm
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- JESD-30 Code: S-XDSO-C6
- Rds On (Max) @ Id, Vgs: 37m Ω @ 7.4A, 4.5V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Pin Count: 8
- Number of Terminations: 6
- Published: 2015
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Current - Continuous Drain (Id) @ 25°C: 5A
- Drain to Source Voltage (Vdss): 20V
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Subcategory: Other Transistors
- Length: 3.05mm
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 70 ns
- Power Dissipation: 1.3W
- Drain to Source Breakdown Voltage: -20V
- Series: TrenchFET?
- FET Type: 2 P-Channel (Dual)
- Threshold Voltage: -1V
- Turn-Off Delay Time: 72 ns
- Package / Case: PowerPAK? 1212-8 Dual
- Continuous Drain Current (ID): -7.4A
- Base Part Number: SI7913
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