SI7958DP-T1-GE3Vishay Siliconix
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    SI7958DP-T1-GE3123
    • Manufacturer No：
      SI7958DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      289754
    • Description：
      MOSFET 2N-CH 40V 7.2A PPAK SO-8
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    SI7958DP-T1-GE3
    • Manufacturer No：
      SI7958DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI7958DP-T1-GE3
    • SKU：
      289754
    • Description：
      MOSFET 2N-CH 40V 7.2A PPAK SO-8

    User Guide

    User Guide

    SI7958DP-T1-GE3 Details

    MOSFET 2N-CH 40V 7.2A PPAK SO-8

    SI7958DP-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Pin Count: 8
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Matte Tin (Sn)
    • Threshold Voltage: 3V
    • REACH SVHC: Unknown
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Terminal Form: C BEND
    • Subcategory: FET General Purpose Power
    • Max Power Dissipation: 1.4W
    • FET Feature: Logic Level Gate
    • FET Type: 2 N-Channel (Dual)
    • Fall Time (Typ): 17 ns
    • Current - Continuous Drain (Id) @ 25°C: 7.2A
    • Continuous Drain Current (ID): 11.3A
    • Width: 5.89mm
    • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
    • Avalanche Energy Rating (Eas): 61 mJ
    • JESD-30 Code: R-XDSO-C6
    • Base Part Number: SI7958
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Number of Terminations: 6
    • Published: 2015
    • Time@Peak Reflow Temperature-Max (s): 40
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 40V
    • Length: 4.9mm
    • Pulsed Drain Current-Max (IDM): 40A
    • Case Connection: DRAIN
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Series: TrenchFET?
    • Turn On Delay Time: 17 ns
    • Rise Time: 17 ns
    • Height: 1.04mm
    • Weight: 506.605978mg
    • Turn-Off Delay Time: 66 ns
    • Package / Case: PowerPAK? SO-8 Dual
    • Resistance: 16.5mOhm
    • Rds On (Max) @ Id, Vgs: 16.5m Ω @ 11.3A, 10V
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