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- Manufacturer No：SI4866DY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4866DY-T1-E3
- SKU：248081
- Description：Trans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R
User Guide
User Guide
SI4866DY-T1-E3 Details
Trans MOSFET N-CH 12V 11A 8-Pin SOIC N T/R
SI4866DY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Height: 1.55mm
- Continuous Drain Current (ID): 17A
- Turn On Delay Time: 28 ns
- Vgs (Max): ±8V
- Resistance: 5.5mOhm
- Power Dissipation-Max: 1.6W Ta
- Turn-Off Delay Time: 82 ns
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 5.5m Ω @ 17A, 4.5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Position: DUAL
- Drain to Source Breakdown Voltage: 12V
- Published: 2009
- Transistor Element Material: SILICON
- Length: 5mm
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Fall Time (Typ): 35 ns
- Power Dissipation: 1.6W
- Series: TrenchFET?
- Rise Time: 32 ns
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Weight: 186.993455mg
- Current - Continuous Drain (Id) @ 25°C: 11A Ta
- Nominal Vgs: 600 mV
- Vgs(th) (Max) @ Id: 600mV @ 250μA (Min)
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