SIA519EDJ-T1-GE3Vishay Siliconix
    Add to like
    Add to project list
    • Manufacturer No：
      SIA519EDJ-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      248863
    • Description：
      MOSFET 20V 4.5A/4.5A N&P-CH MOSFET
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:278426
    • Qty Unit Price price
    • 1 $0.574 $0.574
    • 10 $0.568 $5.68
    • 100 $0.562 $56.2
    • 1000 $0.556 $556
    • 10000 $0.55 $5500

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      SIA519EDJ-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SIA519EDJ-T1-GE3
    • SKU：
      248863
    • Description：
      MOSFET 20V 4.5A/4.5A N&P-CH MOSFET

    User Guide

    User Guide

    SIA519EDJ-T1-GE3 Details

    MOSFET 20V 4.5A/4.5A N&P-CH MOSFET

    SIA519EDJ-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Published: 2016
    • Number of Pins: 6
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • REACH SVHC: Unknown
    • Drain to Source Voltage (Vdss): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Subcategory: Other Transistors
    • Continuous Drain Current (ID): 4.5A
    • Threshold Voltage: 600mV
    • FET Feature: Logic Level Gate
    • Power Dissipation: 1.9W
    • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
    • Vgs(th) (Max) @ Id: 1.4V @ 250μA
    • Max Power Dissipation: 7.8W
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Terminations: 6
    • Pin Count: 6
    • Gate to Source Voltage (Vgs): 12V
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 20V
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Resistance: 40mOhm
    • Series: TrenchFET?
    • FET Type: N and P-Channel
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Weight: 28.009329mg
    • Package / Case: PowerPAK? SC-70-6 Dual
    • Rds On (Max) @ Id, Vgs: 40m Ω @ 4.2A, 4.5V
    Search for similar products

    SIA519EDJ-T1-GE3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SIA519EDJ-T1-GE3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via