SI3441BDV-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI3441BDV-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      251118
    • Description：
      MOSFET P-CH 20V 2.45A 6-TSOP
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    • Manufacturer No：
      SI3441BDV-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI3441BDV-T1-E3
    • SKU：
      251118
    • Description：
      MOSFET P-CH 20V 2.45A 6-TSOP

    User Guide

    User Guide

    SI3441BDV-T1-E3 Details

    MOSFET P-CH 20V 2.45A 6-TSOP

    SI3441BDV-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Width: 3mm
    • Technology: MOSFET (Metal Oxide)
    • Gate to Source Voltage (Vgs): 8V
    • Subcategory: Other Transistors
    • Turn On Delay Time: 15 ns
    • Turn-Off Delay Time: 30 ns
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Fall Time (Typ): 55 ns
    • Dual Supply Voltage: -20V
    • Vgs (Max): ±8V
    • Power Dissipation: 860mW
    • Vgs(th) (Max) @ Id: 850mV @ 250μA
    • Rds On (Max) @ Id, Vgs: 90m Ω @ 3.3A, 4.5V
    • Threshold Voltage: -850mV
    • Current - Continuous Drain (Id) @ 25°C: 2.45A Ta
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 6
    • Pin Count: 6
    • Termination: SMD/SMT
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2008
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 20V
    • Operating Temperature: -55°C~150°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Height: 990.6μm
    • Reverse Recovery Time: 50 ns
    • FET Type: P-Channel
    • Length: 3.0988mm
    • Resistance: 130mOhm
    • Rise Time: 55 ns
    • Series: TrenchFET?
    • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
    • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
    • Power Dissipation-Max: 860mW Ta
    • Nominal Vgs: -850 mV
    • Continuous Drain Current (ID): -2.45A
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