IRFRC20PBF
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountNumber of Elements
1Number of Channels
1Radiation Hardening
NoLead Free
Lead FreeContact Plating
TinMin Operating Temperature
-55°CFactory Lead Time
8 WeeksPackaging
TubeNumber of Pins
3Max Operating Temperature
150°CREACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleDrain to Source Voltage (Vdss)
600VDrain to Source Breakdown Voltage
600VGate to Source Voltage (Vgs)
20VContinuous Drain Current (ID)
2AHeight
2.39mmOperating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Published
1997Threshold Voltage
4VVgs (Max)
±20VLength
6.73mmPackage / Case
TO-252-3, DPak (2 Leads + Tab), SC-63Turn On Delay Time
10 nsPower Dissipation
2.5WFall Time (Typ)
25 nsVgs(th) (Max) @ Id
4V @ 250μATurn-Off Delay Time
30 nsWidth
6.22mmNominal Vgs
4 VSupplier Device Package
D-PakWeight
1.437803gGate Charge (Qg) (Max) @ Vgs
18nC @ 10VRise Time
23nsResistance
4.4OhmDrain to Source Resistance
4.4OhmInput Capacitance (Ciss) (Max) @ Vds
350pF @ 25VCurrent - Continuous Drain (Id) @ 25°C
2A TcInput Capacitance
350pFPower Dissipation-Max
2.5W Ta 42W TcRecovery Time
580 nsRds On Max
4.4 ΩRds On (Max) @ Id, Vgs
4.4Ohm @ 1.2A, 10V