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  • Manufacturer No:
    SI4288DY-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    259129
  • Description:
    Trans Mosfet N-ch 40V 7.4A 8-PIN SOIC N T/r
  • Quantity:
      • RFQ
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Inventory:17755
  • Qty Unit Price price
  • 1 $1.104 $1.104
  • 10 $1.093 $10.93
  • 100 $1.082 $108.2
  • 1000 $1.071 $1071
  • 10000 $1.06 $10600

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  • Manufacturer No:
    SI4288DY-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI4288DY-T1-GE3
  • SKU:
    259129
  • Description:
    Trans Mosfet N-ch 40V 7.4A 8-PIN SOIC N T/r

SI4288DY-T1-GE3 Details

Trans Mosfet N-ch 40V 7.4A 8-PIN SOIC N T/r

SI4288DY-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Terminal Finish: MATTE TIN
  • Height: 1.75mm
  • Operating Mode: ENHANCEMENT MODE
  • Fall Time (Typ): 8 ns
  • FET Feature: Logic Level Gate
  • Turn-Off Delay Time: 16 ns
  • FET Type: 2 N-Channel (Dual)
  • Max Power Dissipation: 3.1W
  • Current - Continuous Drain (Id) @ 25°C: 9.2A
  • Rds On (Max) @ Id, Vgs: 20m Ω @ 10A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • REACH SVHC: No SVHC
  • Published: 2015
  • Max Junction Temperature (Tj): 150°C
  • Element Configuration: Dual
  • Power Dissipation: 2W
  • Drain to Source Breakdown Voltage: 40V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Threshold Voltage: 1.2V
  • Transistor Application: SWITCHING
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Turn On Delay Time: 7 ns
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Series: TrenchFET?
  • Continuous Drain Current (ID): 7.4A
  • Weight: 506.605978mg
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V

Excellent

Based on reviews

Excellent

Based on reviews

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