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- Manufacturer No：SI6968BEDQ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI6968BEDQ-T1-GE3
- SKU：263709
- Description：MOSFET 2N-CH 20V 5.2A 8-TSSOP
User Guide
User Guide
SI6968BEDQ-T1-GE3 Details
MOSFET 2N-CH 20V 5.2A 8-TSSOP
SI6968BEDQ-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Power Dissipation: 1W
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Published: 2014
- Drain to Source Voltage (Vdss): 20V
- Length: 3mm
- Height: 1.2mm
- Operating Mode: ENHANCEMENT MODE
- Package / Case: 8-TSSOP (0.173, 4.40mm Width)
- Series: TrenchFET?
- Resistance: 22mOhm
- Terminal Finish: PURE MATTE TIN
- Fall Time (Typ): 330 ns
- Turn On Delay Time: 245 ns
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Turn-Off Delay Time: 860 ns
- Base Part Number: SI6968
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Max Power Dissipation: 1W
- Gate to Source Voltage (Vgs): 12V
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- Width: 4.4mm
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- Continuous Drain Current (ID): 5.2A
- Subcategory: FET General Purpose Powers
- Rise Time: 330 ns
- FET Type: 2 N-Channel (Dual) Common Drain
- Weight: 157.991892mg
- Vgs(th) (Max) @ Id: 1.6V @ 250μA
- Rds On (Max) @ Id, Vgs: 22m Ω @ 6.5A, 4.5V
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