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- Manufacturer No：SI5515DC-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI5515DC-T1-E3
- SKU：262209
- Description：MOSFET N/P-CH 20V 4.4A 1206-8
User Guide
User Guide
SI5515DC-T1-E3 Details
MOSFET N/P-CH 20V 4.4A 1206-8
SI5515DC-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Lead Free: Lead Free
- Part Status: Obsolete
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Operating Temperature: -55°C~150°C TJ
- Gate to Source Voltage (Vgs): 8V
- Length: 3.05mm
- Resistance: 40mOhm
- Turn On Delay Time: 18 ns
- Max Power Dissipation: 1.1W
- Power - Max: 1.1W
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Package / Case: 8-SMD, Flat Lead
- FET Type: N and P-Channel
- Drain to Source Resistance: 69mOhm
- Weight: 84.99187mg
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Base Part Number: SI5515
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Published: 2009
- Drain to Source Voltage (Vdss): 20V
- Height: 1.1mm
- Width: 1.65mm
- Threshold Voltage: 400mV
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Power Dissipation: 1.1W
- Continuous Drain Current (ID): 4.4A
- Fall Time (Typ): 32 ns
- Turn-Off Delay Time: 42 ns
- Nominal Vgs: 400 mV
- Rise Time: 32ns
- Rds On Max: 40 mΩ
- Supplier Device Package: 1206-8 ChipFET?
- Current - Continuous Drain (Id) @ 25°C: 4.4A 3A
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