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- Manufacturer No：AUIRF1324WL
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：AUIRF1324WL
- SKU：2650019
- Description：MOSFET N-CH 24V 240A TO-262
User Guide
User Guide
AUIRF1324WL Details
MOSFET N-CH 24V 240A TO-262
AUIRF1324WL Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- Factory Lead Time: 16 Weeks
- Drain to Source Breakdown Voltage: 24V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Width: 4.83mm
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Length: 10.67mm
- Rise Time: 200 ns
- Turn On Delay Time: 18 ns
- Nominal Vgs: 2 V
- Continuous Drain Current (ID): 240A
- JEDEC-95 Code: TO-262AA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Package / Case: TO-262-3 Wide Leads
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Terminations: 3
- REACH SVHC: No SVHC
- Published: 2011
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Threshold Voltage: 2V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Power Dissipation: 300W
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Series: HEXFET?
- Turn-Off Delay Time: 75 ns
- Fall Time (Typ): 110 ns
- Height: 11.3mm
- Power Dissipation-Max: 300W Tc
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Current - Continuous Drain (Id) @ 25°C: 240A Tc
- Rds On (Max) @ Id, Vgs: 1.3m Ω @ 195A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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