Add to like
Add to project list
IPB80N06S2L-H5123
Inventory:0
  • Qty Unit Price price

Not the price you want? Send RFQ Now and we'll contact you ASAP

IPB80N06S2L-H5
  • Manufacturer No:
    IPB80N06S2L-H5
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPB80N06S2L-H5
  • SKU:
    2662277
  • Description:
    N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

IPB80N06S2L-H5 Details

N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

IPB80N06S2L-H5 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Qualification Status: Not Qualified
  • Terminal Finish: Matte Tin (Sn)
  • Transistor Element Material: SILICON
  • Terminal Position: SINGLE
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Voltage (Vdss): 55V
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Power Dissipation-Max: 300W Tc
  • Pulsed Drain Current-Max (IDM): 320A
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
  • Number of Terminations: 2
  • Packaging: Tape & Reel (TR)
  • RoHS Status: RoHS Compliant
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Pin Count: 4
  • Terminal Form: GULL WING
  • Published: 2006
  • Reach Compliance Code: compliant
  • FET Type: N-Channel
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • DS Breakdown Voltage-Min: 55V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • Drain Current-Max (Abs) (ID): 80A
  • Series: OptiMOS?
  • Additional Feature: LOGIC LEVEL COMPATIBLE
  • Current - Continuous Drain (Id) @ 25°C: 80A Tc
  • Avalanche Energy Rating (Eas): 700 mJ
  • Drain-source On Resistance-Max: 0.0062Ohm
  • Rds On (Max) @ Id, Vgs: 4.7m Ω @ 80A, 10V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via