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- Manufacturer No：IPA50R500CE
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPA50R500CE
- SKU：2665127
- Description：N-Channel 500 V 7.6A (Tc) 28W (Tc) Through Hole PG-TO220-3-31
User Guide
User Guide
IPA50R500CE Details
N-Channel 500 V 7.6A (Tc) 28W (Tc) Through Hole PG-TO220-3-31
IPA50R500CE Specification Parameters
- Surface Mount: NO
- Mounting Type: Through Hole
- RoHS Status: RoHS Compliant
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Published: 2008
- Reach Compliance Code: compliant
- Drain to Source Voltage (Vdss): 500V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Operating Temperature: -40°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On): 13V
- Pulsed Drain Current-Max (IDM): 24A
- Series: CoolMOS?
- FET Feature: Super Junction
- Vgs(th) (Max) @ Id: 3.5V @ 200μA
- Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
- Avalanche Energy Rating (Eas): 129 mJ
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- DS Breakdown Voltage-Min: 500V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code: TO-220AB
- JESD-30 Code: R-PSFM-T3
- Package / Case: TO-220-3 Full Pack
- Drain-source On Resistance-Max: 0.5Ohm
- Power Dissipation-Max: 28W Tc
- Current - Continuous Drain (Id) @ 25°C: 7.6A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
- Rds On (Max) @ Id, Vgs: 500m Ω @ 2.3A, 13V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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