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  • Manufacturer No:
    IPB80N06S2L09ATMA2
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPB80N06S2L09ATMA2
  • SKU:
    2667652
  • Description:
    MOSFET N-CH 55V 80A TO263-3

IPB80N06S2L09ATMA2 Details

MOSFET N-CH 55V 80A TO263-3

IPB80N06S2L09ATMA2 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Factory Lead Time: 10 Weeks
  • Published: 2006
  • Terminal Position: SINGLE
  • FET Type: N-Channel
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Turn On Delay Time: 10 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Series: OptiMOS?
  • Current - Continuous Drain (Id) @ 25°C: 80A Tc
  • Rise Time: 19ns
  • Drain-source On Resistance-Max: 0.011Ohm
  • Vgs(th) (Max) @ Id: 2V @ 125μA
  • Rds On (Max) @ Id, Vgs: 8.2m Ω @ 52A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Max Dual Supply Voltage: 55V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Continuous Drain Current (ID): 80A
  • Fall Time (Typ): 18 ns
  • Additional Feature: LOGIC LEVEL COMPATIBLE
  • Turn-Off Delay Time: 53 ns
  • Power Dissipation-Max: 190W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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