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Inventory:4485
  • Qty Unit Price price
  • 1 $9040.77 $9040.77
  • 10 $8951.257 $89512.57
  • 100 $8862.63 $886263
  • 1000 $8774.881 $8774881
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  • Manufacturer No:
    IPB072N15N3GATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPB072N15N3GATMA1
  • SKU:
    2669565
  • Description:
    Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) TO-263

IPB072N15N3GATMA1 Details

Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) TO-263

IPB072N15N3GATMA1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Pin Count: 4
  • Pbfree Code: no
  • Qualification Status: Not Qualified
  • Max Dual Supply Voltage: 150V
  • Reach Compliance Code: not_compliant
  • Terminal Finish: Tin (Sn)
  • Terminal Position: SINGLE
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Halogen Free: Halogen Free
  • Vgs (Max): ±20V
  • JESD-30 Code: R-PSSO-G2
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 25 ns
  • Pulsed Drain Current-Max (IDM): 400A
  • Series: OptiMOS?
  • Current - Continuous Drain (Id) @ 25°C: 100A Tc
  • Drive Voltage (Max Rds On,Min Rds On): 8V 10V
  • Drain-source On Resistance-Max: 0.0072Ohm
  • Avalanche Energy Rating (Eas): 780 mJ
  • Rds On (Max) @ Id, Vgs: 7.2m Ω @ 100A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Pins: 3
  • Lead Free: Contains Lead
  • Terminal Form: GULL WING
  • Factory Lead Time: 13 Weeks
  • Published: 2008
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Operating Mode: ENHANCEMENT MODE
  • Continuous Drain Current (ID): 100A
  • Power Dissipation: 300W
  • Case Connection: DRAIN
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Rise Time: 35 ns
  • Fall Time (Typ): 14 ns
  • Power Dissipation-Max: 300W Tc
  • Turn-Off Delay Time: 46 ns
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Vgs(th) (Max) @ Id: 4V @ 270μA
  • Input Capacitance (Ciss) (Max) @ Vds: 5470pF @ 75V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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