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IPB049NE7N3GATMA1123
Inventory:2091
  • Qty Unit Price price
  • 1 $4237.739 $4237.739
  • 10 $4195.781 $41957.81
  • 100 $4154.238 $415423.8
  • 1000 $4113.106 $4113106
  • 10000 $4072.382 $40723820

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IPB049NE7N3GATMA1
  • Manufacturer No:
    IPB049NE7N3GATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPB049NE7N3GATMA1
  • SKU:
    2663132
  • Description:
    Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263

IPB049NE7N3GATMA1 Details

Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263

IPB049NE7N3GATMA1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Pin Count: 4
  • Pbfree Code: no
  • Terminal Form: GULL WING
  • Factory Lead Time: 13 Weeks
  • Published: 2008
  • Terminal Finish: Tin (Sn)
  • Drain to Source Voltage (Vdss): 75V
  • Terminal Position: SINGLE
  • Power Dissipation: 150W
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Turn-Off Delay Time: 30 ns
  • Fall Time (Typ): 8 ns
  • Turn On Delay Time: 14 ns
  • Subcategory: FET General Purpose Powers
  • Power Dissipation-Max: 150W Tc
  • Drain-source On Resistance-Max: 0.0049Ohm
  • Rds On (Max) @ Id, Vgs: 4.9m Ω @ 80A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • REACH SVHC: No SVHC
  • Reach Compliance Code: not_compliant
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • DS Breakdown Voltage-Min: 75V
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Continuous Drain Current (ID): 80A
  • Threshold Voltage: 3.1V
  • Rise Time: 11 ns
  • Series: OptiMOS?
  • Current - Continuous Drain (Id) @ 25°C: 80A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 91μA
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 37.5V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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