BSC320N20NS3GATMA1Infineon
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    • 10 $1.675 $16.75
    • 100 $1.658 $165.8
    • 1000 $1.641 $1641
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    • Manufacturer No：
      BSC320N20NS3GATMA1
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      BSC320N20NS3GATMA1
    • SKU：
      2676003
    • Description：
      Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP

    User Guide

    User Guide

    BSC320N20NS3GATMA1 Details

    Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP

    BSC320N20NS3GATMA1 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Lead Free: Contains Lead
    • Number of Terminations: 5
    • Reach Compliance Code: not_compliant
    • Transistor Element Material: SILICON
    • Published: 2004
    • Terminal Form: FLAT
    • Technology: MOSFET (Metal Oxide)
    • Halogen Free: Halogen Free
    • Factory Lead Time: 26 Weeks
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • JESD-30 Code: R-PDSO-F5
    • Series: OptiMOS?
    • Continuous Drain Current (ID): 36A
    • Power Dissipation-Max: 125W Tc
    • Current - Continuous Drain (Id) @ 25°C: 36A Tc
    • Vgs(th) (Max) @ Id: 4V @ 90μA
    • Rds On (Max) @ Id, Vgs: 32m Ω @ 36A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Contact Plating: Tin
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Pin Count: 8
    • Pbfree Code: no
    • Qualification Status: Not Qualified
    • Max Dual Supply Voltage: 200V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Rise Time: 9 ns
    • Package / Case: 8-PowerTDFN
    • Power Dissipation: 125W
    • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
    • Drain-source On Resistance-Max: 0.032Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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