IRF1404ZPBFInfineon
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    Inventory:3251
    • Qty Unit Price price
    • 1 $1.719 $1.719
    • 10 $1.701 $17.01
    • 100 $1.684 $168.4
    • 1000 $1.667 $1667
    • 10000 $1.65 $16500

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    • Manufacturer No：
      IRF1404ZPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF1404ZPBF
    • SKU：
      2679004
    • Description：
      MOSFET N-CH 40V 180A TO-220AB

    User Guide

    User Guide

    IRF1404ZPBF Details

    MOSFET N-CH 40V 180A TO-220AB

    IRF1404ZPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Voltage - Rated DC: 40V
    • Dual Supply Voltage: 40V
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Current Rating: 75A
    • Turn On Delay Time: 18 ns
    • Turn-Off Delay Time: 36 ns
    • Recovery Time: 42 ns
    • Resistance: 3.7Ohm
    • Fall Time (Typ): 58 ns
    • Width: 4.69mm
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    • Continuous Drain Current (ID): 190A
    • Height: 8.77mm
    • Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Packaging: Tube
    • Number of Pins: 3
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 40V
    • Published: 2003
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Rise Time: 110 ns
    • Nominal Vgs: 4 V
    • Length: 10.54mm
    • Power Dissipation: 220W
    • Pulsed Drain Current-Max (IDM): 750A
    • Power Dissipation-Max: 200W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 180A Tc
    • Avalanche Energy Rating (Eas): 480 mJ
    • Rds On (Max) @ Id, Vgs: 3.7m Ω @ 75A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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