IRFHM8329TRPBFInfineon
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    • Manufacturer No：
      IRFHM8329TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      2679039
    • Description：
      N-Channel 30 V 16A (Ta), 57A (Tc) 2.6W (Ta), 33W (Tc) Surface Mount PQFN (3x3)
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    • 10 $0.631 $6.31
    • 100 $0.624 $62.4
    • 1000 $0.617 $617

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    • Manufacturer No：
      IRFHM8329TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFHM8329TRPBF
    • SKU：
      2679039
    • Description：
      N-Channel 30 V 16A (Ta), 57A (Tc) 2.6W (Ta), 33W (Tc) Surface Mount PQFN (3x3)

    User Guide

    User Guide

    IRFHM8329TRPBF Details

    N-Channel 30 V 16A (Ta), 57A (Tc) 2.6W (Ta), 33W (Tc) Surface Mount PQFN (3x3)

    IRFHM8329TRPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • REACH SVHC: No SVHC
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 30V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Continuous Drain Current (ID): 16A
    • Threshold Voltage: 1.7V
    • Case Connection: DRAIN
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn On Delay Time: 14 ns
    • Turn-Off Delay Time: 14 ns
    • Factory Lead Time: 39 Weeks
    • Pulsed Drain Current-Max (IDM): 230A
    • Rise Time: 74 ns
    • Avalanche Energy Rating (Eas): 43 mJ
    • Vgs(th) (Max) @ Id: 2.2V @ 25μA
    • Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Number of Pins: 8
    • Published: 2013
    • Number of Terminations: 5
    • Gate to Source Voltage (Vgs): 20V
    • Part Status: Not For New Designs
    • Terminal Form: FLAT
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Series: HEXFET?
    • Fall Time (Typ): 14 ns
    • Package / Case: 8-PowerTDFN
    • Power Dissipation: 2.6W
    • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
    • JESD-30 Code: S-PDSO-F5
    • Rds On (Max) @ Id, Vgs: 6.1m Ω @ 20A, 10V
    • Current - Continuous Drain (Id) @ 25°C: 16A Ta 57A Tc
    • Power Dissipation-Max: 2.6W Ta 33W Tc
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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