IRFR120NTRPBFInfineon
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    Inventory:25907
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    • 1 $1.438 $1.438
    • 10 $1.423 $14.23
    • 100 $1.408 $140.8
    • 1000 $1.394 $1394
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    • Manufacturer No：
      IRFR120NTRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFR120NTRPBF
    • SKU：
      2679192
    • Description：
      MOSFET N-CH 100V 9.4A DPAK

    User Guide

    User Guide

    IRFR120NTRPBF Details

    MOSFET N-CH 100V 9.4A DPAK

    IRFR120NTRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Factory Lead Time: 12 Weeks
    • Termination: SMD/SMT
    • Voltage - Rated DC: 100V
    • Drain to Source Breakdown Voltage: 100V
    • Max Operating Temperature: 175°C
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Published: 1998
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Recovery Time: 150 ns
    • Width: 6.22mm
    • Turn-Off Delay Time: 32 ns
    • Nominal Vgs: 4 V
    • Drain to Source Resistance: 210mOhm
    • Length: 6.7056mm
    • Current Rating: 9.1A
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Power Dissipation: 39W
    • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
    • Rds On Max: 210 mΩ
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Min Operating Temperature: -55°C
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Drain to Source Voltage (Vdss): 100V
    • Dual Supply Voltage: 100V
    • Max Junction Temperature (Tj): 175°C
    • Element Configuration: Single
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Vgs (Max): ±20V
    • Input Capacitance: 330pF
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Turn On Delay Time: 4.5 ns
    • Fall Time (Typ): 23 ns
    • Resistance: 210mOhm
    • Supplier Device Package: D-Pak
    • Continuous Drain Current (ID): 9.4A
    • Height: 2.52mm
    • Rise Time: 23ns
    • Power Dissipation-Max: 48W Tc
    • Current - Continuous Drain (Id) @ 25°C: 9.4A Tc
    • Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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