IRF7821TRPBFInfineon
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    • Manufacturer No：
      IRF7821TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF7821TRPBF
    • SKU：
      2679640
    • Description：
      MOSFET N-CH 30V 13.6A 8-SOIC

    User Guide

    User Guide

    IRF7821TRPBF Details

    MOSFET N-CH 30V 13.6A 8-SOIC

    IRF7821TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2007
    • Element Configuration: Single
    • Voltage - Rated DC: 30V
    • Dual Supply Voltage: 30V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Power Dissipation: 2.5W
    • Width: 3.9878mm
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Lead Free: Contains Lead, Lead Free
    • Rise Time: 2.7 ns
    • Length: 4.9784mm
    • Fall Time (Typ): 7.3 ns
    • Turn-Off Delay Time: 9.7 ns
    • Current Rating: 13.6A
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Operating Temperature: -55°C~155°C TJ
    • Current - Continuous Drain (Id) @ 25°C: 13.6A Ta
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Factory Lead Time: 12 Weeks
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Max Junction Temperature (Tj): 155°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 30V
    • Threshold Voltage: 1V
    • Height: 1.75mm
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Series: HEXFET?
    • Turn On Delay Time: 6.3 ns
    • Recovery Time: 42 ns
    • Power Dissipation-Max: 2.5W Ta
    • Nominal Vgs: 1 V
    • Resistance: 9.1MOhm
    • Continuous Drain Current (ID): 13.6A
    • Row Spacing: 6.3 mm
    • Avalanche Energy Rating (Eas): 44 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
    • Rds On (Max) @ Id, Vgs: 9.1m Ω @ 13A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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