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- Manufacturer No：SI4874BDY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4874BDY-T1-GE3
- SKU：236750
- Description：MOSFET N-CH 30V 12A 8-SOIC
User Guide
User Guide
SI4874BDY-T1-GE3 Details
MOSFET N-CH 30V 12A 8-SOIC
SI4874BDY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Qualification Status: Not Qualified
- Published: 2012
- Reach Compliance Code: unknown
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Series: TrenchFET?
- Weight: 186.993455mg
- Current - Continuous Drain (Id) @ 25°C: 12A Ta
- Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 16A
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Resistance: 7mOhm
- Power Dissipation-Max: 1.6W Ta
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 7m Ω @ 16A, 10V
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