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- Manufacturer No：IRG4BC20SPBF
- Manufacturer：Infineon
- Category：Transistors - IGBTs - Single
- Datasheet：IRG4BC20SPBF
- SKU：2683967
- Description：IGBT 600V 19A 60W TO220AB
User Guide
User Guide
IRG4BC20SPBF Details
IGBT 600V 19A 60W TO220AB
IRG4BC20SPBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Terminations: 3
- REACH SVHC: No SVHC
- Element Configuration: Dual
- Input Type: Standard
- Collector Emitter Breakdown Voltage: 600V
- Gate-Emitter Voltage-Max: 20V
- Gate-Emitter Thr Voltage-Max: 6V
- Published: 2000
- Collector Emitter Voltage (VCEO): 1.6V
- Polarity/Channel Type: N-CHANNEL
- Power Dissipation: 60W
- Case Connection: COLLECTOR
- Max Collector Current: 19A
- Subcategory: Insulated Gate BIP Transistors
- Turn On Time: 38 ns
- Length: 10.54mm
- Width: 4.69mm
- Gate Charge: 27nC
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
- Switching Energy: 120μJ (on), 2.05mJ (off)
- Turn Off Time-Nom (toff): 1540 ns
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Factory Lead Time: 16 Weeks
- Transistor Element Material: SILICON
- Voltage - Rated DC: 600V
- Terminal Position: SINGLE
- Part Status: Not For New Designs
- Operating Temperature: -55°C~150°C TJ
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Max Power Dissipation: 60W
- Collector Emitter Saturation Voltage: 1.4V
- Current Rating: 19A
- Transistor Application: POWER CONTROL
- Turn On Delay Time: 27 ns
- Current - Collector Pulsed (Icm): 38A
- Rise Time: 9.7 ns
- Height: 8.77mm
- Turn-Off Delay Time: 540 ns
- Test Condition: 480V, 10A, 50 Ω, 15V
- Td (on/off) @ 25°C: 27ns/540ns
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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