IPD70N04S3-07Infineon
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    • Manufacturer No：
      IPD70N04S3-07
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPD70N04S3-07
    • SKU：
      2686017
    • Description：
      MOSFET N-CH 40V 82A TO252-3

    User Guide

    User Guide

    IPD70N04S3-07 Details

    MOSFET N-CH 40V 82A TO252-3

    IPD70N04S3-07 Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 40V
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Rise Time: 8 ns
    • Drain Current-Max (Abs) (ID): 70A
    • Turn On Delay Time: 13 ns
    • Series: OptiMOS?
    • Pulsed Drain Current-Max (IDM): 280A
    • Continuous Drain Current (ID): 82A
    • Additional Feature: ULTRA LOW RESISTANCE
    • Power Dissipation: 79W
    • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
    • Avalanche Energy Rating (Eas): 145 mJ
    • Number of Terminations: 2
    • Packaging: Tape & Reel (TR)
    • RoHS Status: RoHS Compliant
    • Surface Mount: YES
    • Lead Free: Lead Free
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Pbfree Code: no
    • Terminal Form: GULL WING
    • Published: 2007
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Max Dual Supply Voltage: 40V
    • Technology: MOSFET (Metal Oxide)
    • Halogen Free: Halogen Free
    • Length: 6.5mm
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Height: 2.3mm
    • Fall Time (Typ): 7 ns
    • Width: 6.22mm
    • HTS Code: 8541.29.00.95
    • Turn-Off Delay Time: 17 ns
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Drain-source On Resistance-Max: 0.006Ohm
    • Power Dissipation-Max: 79W Tc
    • Vgs(th) (Max) @ Id: 4V @ 50μA
    • Current - Continuous Drain (Id) @ 25°C: 82A Tc
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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