IRF7507TRPBFInfineon
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    Inventory:56703
    • Qty Unit Price price
    • 1 $120.713 $120.713
    • 10 $119.517 $1195.17
    • 100 $118.333 $11833.3
    • 1000 $117.161 $117161
    • 10000 $116 $1160000

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    • Manufacturer No：
      IRF7507TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7507TRPBF
    • SKU：
      2690873
    • Description：
      MOSFET N/P-CH 20V 1.7A MICRO8

    User Guide

    User Guide

    IRF7507TRPBF Details

    MOSFET N/P-CH 20V 1.7A MICRO8

    IRF7507TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 8
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 40
    • Drain to Source Breakdown Voltage: 20V
    • Width: 3mm
    • Transistor Application: SWITCHING
    • Published: 1998
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Max Power Dissipation: 1.25W
    • Series: HEXFET?
    • Threshold Voltage: 700mV
    • Resistance: 270mOhm
    • Height: 860μm
    • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
    • Vgs(th) (Max) @ Id: 700mV @ 250μA
    • Nominal Vgs: 700 mV
    • Rds On (Max) @ Id, Vgs: 140m Ω @ 1.7A, 4.5V
    • Base Part Number: IRF7507PBF
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Gate to Source Voltage (Vgs): 12V
    • Transistor Element Material: SILICON
    • Length: 3mm
    • Operating Temperature: -55°C~150°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
    • Continuous Drain Current (ID): 2.4A
    • Power Dissipation: 1.25W
    • Pulsed Drain Current-Max (IDM): 19A
    • FET Feature: Logic Level Gate
    • Turn-Off Delay Time: 38 ns
    • FET Type: N and P-Channel
    • Additional Feature: ULTRA LOW RESISTANCE
    • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
    • Current - Continuous Drain (Id) @ 25°C: 2.4A 1.7A
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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