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  • Manufacturer No:
    IRFL024NPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFL024NPBF
  • SKU:
    2691163
  • Description:
    MOSFET N-CH 55V 2.8A SOT223

IRFL024NPBF Details

MOSFET N-CH 55V 2.8A SOT223

IRFL024NPBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Terminations: 4
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Factory Lead Time: 20 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Published: 1999
  • Vgs (Max): ±20V
  • DS Breakdown Voltage-Min: 55V
  • Case Connection: DRAIN
  • JESD-30 Code: R-PDSO-G4
  • Drain Current-Max (Abs) (ID): 2.8A
  • Package / Case: TO-261-4, TO-261AA
  • Power Dissipation-Max: 1W Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • Surface Mount: YES
  • Terminal Position: DUAL
  • Packaging: Tube
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Reach Compliance Code: not_compliant
  • Transistor Element Material: SILICON
  • Part Status: Discontinued
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Voltage (Vdss): 55V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Series: HEXFET?
  • Additional Feature: AVALANCHE RATED
  • Drain-source On Resistance-Max: 0.075Ohm
  • Current - Continuous Drain (Id) @ 25°C: 2.8A Ta
  • Rds On (Max) @ Id, Vgs: 75m Ω @ 2.8A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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