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  • Manufacturer No:
    IRFZ48NSTRRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFZ48NSTRRPBF
  • SKU:
    2691751
  • Description:
    MOSFET N-CH 55V 64A D2PAK

IRFZ48NSTRRPBF Details

MOSFET N-CH 55V 64A D2PAK

IRFZ48NSTRRPBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Number of Pins: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Operating Temperature: -55°C~175°C TJ
  • Drain to Source Voltage (Vdss): 55V
  • Voltage - Rated DC: 55V
  • Fall Time (Typ): 50 ns
  • Turn On Delay Time: 12 ns
  • Supplier Device Package: D2PAK
  • Turn-Off Delay Time: 34 ns
  • Continuous Drain Current (ID): 64A
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Rise Time: 78ns
  • Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V
  • Input Capacitance: 1.97nF
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • RoHS Status: RoHS Compliant
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Max Operating Temperature: 175°C
  • Element Configuration: Single
  • Published: 2001
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Drain to Source Breakdown Voltage: 55V
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Series: HEXFET?
  • Power Dissipation: 140W
  • Current Rating: 64A
  • Current - Continuous Drain (Id) @ 25°C: 64A Tc
  • Rds On Max: 14 mΩ
  • Power Dissipation-Max: 3.8W Ta 130W Tc
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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