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- Manufacturer No：IRFIZ48GPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFIZ48GPBF
- SKU：208305
- Description：MOSFET N-CH 60V 37A TO220FP
User Guide
User Guide
IRFIZ48GPBF Details
MOSFET N-CH 60V 37A TO220FP
IRFIZ48GPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Drain to Source Breakdown Voltage: 60V
- REACH SVHC: Unknown
- Element Configuration: Single
- Power Dissipation: 50W
- FET Type: N-Channel
- Width: 4.83mm
- Operating Temperature: -55°C~175°C TJ
- Supplier Device Package: TO-220-3
- Fall Time (Typ): 250 ns
- Resistance: 18mOhm
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Weight: 6.000006g
- Continuous Drain Current (ID): 37A
- Turn-Off Delay Time: 210 ns
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Length: 10.63mm
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 22A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Drain to Source Voltage (Vdss): 60V
- Max Operating Temperature: 175°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Published: 2001
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 4V
- Vgs (Max): ±20V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Height: 9.8mm
- Drain to Source Resistance: 18mOhm
- Rise Time: 250ns
- Nominal Vgs: 4 V
- Input Capacitance: 2.4nF
- Power Dissipation-Max: 50W Tc
- Turn On Delay Time: 8.1 ns
- Rds On Max: 18 mΩ
- Current - Continuous Drain (Id) @ 25°C: 37A Tc
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