IRFS3107-7PPBFInfineon
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    • Manufacturer No：
      IRFS3107-7PPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFS3107-7PPBF
    • SKU：
      2692897
    • Description：
      MOSFET N-CH 75V 240A D2PAK-7

    User Guide

    User Guide

    IRFS3107-7PPBF Details

    MOSFET N-CH 75V 240A D2PAK-7

    IRFS3107-7PPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 6
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 75V
    • Number of Pins: 7
    • Part Status: Discontinued
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Turn-Off Delay Time: 100 ns
    • Width: 9.65mm
    • Turn On Delay Time: 17 ns
    • Length: 10.668mm
    • Reverse Recovery Time: 52 ns
    • JESD-30 Code: R-PSSO-G6
    • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 240A Tc
    • Power Dissipation-Max: 370W Tc
    • Rds On (Max) @ Id, Vgs: 2.6m Ω @ 160A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Packaging: Tube
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Factory Lead Time: 14 Weeks
    • Published: 2005
    • Element Configuration: Single
    • Dual Supply Voltage: 75V
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Height: 4.572mm
    • Series: HEXFET?
    • Rise Time: 80 ns
    • Drain Current-Max (Abs) (ID): 240A
    • Nominal Vgs: 4 V
    • Continuous Drain Current (ID): 260A
    • Fall Time (Typ): 64 ns
    • Resistance: 2.6mOhm
    • Power Dissipation: 370W
    • Avalanche Energy Rating (Eas): 320 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
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    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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