IRFB59N10DPBFInfineon
    Add to like
    Add to project list
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRFB59N10DPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFB59N10DPBF
    • SKU：
      2694016
    • Description：
      MOSFET N-CH 100V 59A TO-220AB

    User Guide

    User Guide

    IRFB59N10DPBF Details

    MOSFET N-CH 100V 59A TO-220AB

    IRFB59N10DPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Packaging: Tube
    • Number of Pins: 3
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Drain to Source Breakdown Voltage: 100V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Threshold Voltage: 5.5V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Published: 2000
    • Power Dissipation: 200W
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Turn-Off Delay Time: 20 ns
    • Vgs (Max): ±30V
    • Fall Time (Typ): 12 ns
    • Rise Time: 90 ns
    • Vgs(th) (Max) @ Id: 5.5V @ 250μA
    • Height: 8.763mm
    • Continuous Drain Current (ID): 59A
    • Power Dissipation-Max: 3.8W Ta 200W Tc
    • Current - Continuous Drain (Id) @ 25°C: 59A Tc
    • Rds On (Max) @ Id, Vgs: 25m Ω @ 35.4A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Factory Lead Time: 14 Weeks
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Terminal Position: SINGLE
    • Part Status: Not For New Designs
    • FET Type: N-Channel
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Package / Case: TO-220-3
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Peak Reflow Temperature (Cel): 250
    • Resistance: 25mOhm
    • Series: HEXFET?
    • Turn On Delay Time: 16 ns
    • Width: 4.69mm
    • Nominal Vgs: 5.5 V
    • Current Rating: 59A
    • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
    Search for similar products

    IRFB59N10DPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRFB59N10DPBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via