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  • Manufacturer No:
    IRF6604TR1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF6604TR1
  • SKU:
    2694505
  • Description:
    MOSFET N-CH 30V 12A DIRECTFET

IRF6604TR1 Details

MOSFET N-CH 30V 12A DIRECTFET

IRF6604TR1 Specification Parameters

  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • RoHS Status: RoHS Compliant
  • Lead Free: Lead Free
  • Min Operating Temperature: -40°C
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Max Operating Temperature: 150°C
  • Number of Pins: 7
  • Drain to Source Breakdown Voltage: 30V
  • FET Type: N-Channel
  • Continuous Drain Current (ID): 12A
  • Threshold Voltage: 2.1V
  • Turn-Off Delay Time: 18 ns
  • Power Dissipation: 2.3W
  • Reverse Recovery Time: 31 ns
  • Vgs(th) (Max) @ Id: 2.1V @ 250μA
  • Nominal Vgs: 2.1 V
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 7V
  • Rds On Max: 11.5 mΩ
  • Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 15V
  • Supplier Device Package: DIRECTFET? MQ
  • Input Capacitance: 2.27nF
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Part Status: Obsolete
  • REACH SVHC: No SVHC
  • Gate to Source Voltage (Vgs): 12V
  • Published: 2005
  • Drain to Source Voltage (Vdss): 30V
  • Dual Supply Voltage: 30V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -40°C~150°C TJ
  • Series: HEXFET?
  • Vgs (Max): ±12V
  • Drain to Source Resistance: 11.5Ohm
  • Width: 5.05mm
  • Resistance: 11.5mOhm
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Power Dissipation-Max: 2.3W Ta 42W Tc
  • Current - Continuous Drain (Id) @ 25°C: 12A Ta 49A Tc
  • Package / Case: DirectFET? Isometric MQ
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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