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  • Manufacturer No:
    IRF7101PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    IRF7101PBF
  • SKU:
    2694895
  • Description:
    MOSFET 2N-CH 20V 3.5A 8-SOIC

IRF7101PBF Details

MOSFET 2N-CH 20V 3.5A 8-SOIC

IRF7101PBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Terminations: 8
  • Qualification Status: Not Qualified
  • Transistor Element Material: SILICON
  • Power Dissipation-Max (Abs): 2W
  • DS Breakdown Voltage-Min: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Published: 1997
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Drain Current-Max (Abs) (ID): 3.5A
  • Pulsed Drain Current-Max (IDM): 14A
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • FET Type: 2 N-Channel (Dual)
  • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Base Part Number: IRF7101PBF
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Surface Mount: YES
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Packaging: Tube
  • Terminal Form: GULL WING
  • Power - Max: 2W
  • Drain to Source Voltage (Vdss): 20V
  • Part Status: Discontinued
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Transistor Application: SWITCHING
  • JESD-30 Code: R-PDSO-G8
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Series: HEXFET?
  • FET Feature: Logic Level Gate
  • Drain-source On Resistance-Max: 0.1Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Rds On (Max) @ Id, Vgs: 100m Ω @ 1.8A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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