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  • Manufacturer No:
    IRF8714PBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2695129
  • Description:
    HEXFET® Tube Surface Mount N-Channel Mosfet Transistor 14A Ta 14A 2.5W 5ns
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  • Manufacturer No:
    IRF8714PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF8714PBF
  • SKU:
    2695129
  • Description:
    HEXFET® Tube Surface Mount N-Channel Mosfet Transistor 14A Ta 14A 2.5W 5ns

IRF8714PBF Details

HEXFET® Tube Surface Mount N-Channel Mosfet Transistor 14A Ta 14A 2.5W 5ns

IRF8714PBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • Packaging: Tube
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Threshold Voltage: 1.8V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Dual Supply Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Turn On Delay Time: 10 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Fall Time (Typ): 5 ns
  • Height: 1.4986mm
  • Turn-Off Delay Time: 11 ns
  • Power Dissipation-Max: 2.5W Ta
  • Nominal Vgs: 1.8 V
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Avalanche Energy Rating (Eas): 65 mJ
  • Resistance: 8.7mOhm
  • Rds On (Max) @ Id, Vgs: 8.7m Ω @ 14A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Factory Lead Time: 14 Weeks
  • Published: 2007
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 30V
  • Part Status: Discontinued
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Power Dissipation: 2.5W
  • Width: 3.9878mm
  • Continuous Drain Current (ID): 14A
  • Series: HEXFET?
  • Recovery Time: 21 ns
  • Length: 4.9784mm
  • Vgs(th) (Max) @ Id: 2.35V @ 25μA
  • Current - Continuous Drain (Id) @ 25°C: 14A Ta
  • Rise Time: 9.9ns
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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