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  • Manufacturer No:
    IRFI4020H-117P
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    2698599
  • Description:
    200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.
  • Quantity:
      • RFQ
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Inventory:1313
  • Qty Unit Price price
  • 1 $3.311 $3.311
  • 10 $3.278 $32.78
  • 100 $3.245 $324.5
  • 1000 $3.212 $3212
  • 10000 $3.18 $31800

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  • Manufacturer No:
    IRFI4020H-117P
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    IRFI4020H-117P
  • SKU:
    2698599
  • Description:
    200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.

IRFI4020H-117P Details

200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.

IRFI4020H-117P Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Through Hole
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Terminations: 5
  • Drain to Source Voltage (Vdss): 200V
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~150°C TJ
  • Case Connection: DRAIN
  • Resistance: 100mOhm
  • Transistor Application: AMPLIFIER
  • Fall Time (Typ): 4 ns
  • Turn-Off Delay Time: 18 ns
  • FET Type: 2 N-Channel (Dual)
  • Threshold Voltage: 4.9V
  • Continuous Drain Current (ID): 9.1A
  • Power Dissipation: 21W
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Package / Case: TO-220-5 Full Pack
  • Vgs(th) (Max) @ Id: 4.9V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Through Hole
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • REACH SVHC: No SVHC
  • Number of Pins: 5
  • Drain to Source Breakdown Voltage: 200V
  • Published: 2006
  • FET Feature: Standard
  • Gate to Source Voltage (Vgs): 20V
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Rise Time: 8 ns
  • Width: 4.826mm
  • Height: 9.02mm
  • Pulsed Drain Current-Max (IDM): 36A
  • Recovery Time: 110 ns
  • Max Power Dissipation: 21W
  • Turn On Delay Time: 8.4 ns
  • Avalanche Energy Rating (Eas): 130 mJ
  • Length: 10.6172mm
  • Nominal Vgs: 4.9 V
  • Rds On (Max) @ Id, Vgs: 100m Ω @ 5.5A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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