IRFP4668PBFInfineon
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    Inventory:8265
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    • 1 $11976.314 $11976.314
    • 10 $11857.736 $118577.36
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    • Manufacturer No：
      IRFP4668PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFP4668PBF
    • SKU：
      2700180
    • Description：
      MOSFET N-CH 200V 130A TO-247AC

    User Guide

    User Guide

    IRFP4668PBF Details

    MOSFET N-CH 200V 130A TO-247AC

    IRFP4668PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Dual Supply Voltage: 200V
    • Max Junction Temperature (Tj): 175°C
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Vgs (Max): ±30V
    • Series: HEXFET?
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Nominal Vgs: 5 V
    • Width: 5.3086mm
    • Turn On Delay Time: 41 ns
    • Turn-Off Delay Time: 64 ns
    • Height: 24.99mm
    • Current - Continuous Drain (Id) @ 25°C: 130A Tc
    • Resistance: 9.7mOhm
    • Input Capacitance (Ciss) (Max) @ Vds: 10720pF @ 50V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • Number of Channels: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Threshold Voltage: 5V
    • Packaging: Tube
    • Number of Pins: 3
    • Drain to Source Breakdown Voltage: 200V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2008
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Case Connection: DRAIN
    • Peak Reflow Temperature (Cel): 250
    • Package / Case: TO-247-3
    • Length: 15.87mm
    • JEDEC-95 Code: TO-247AC
    • Power Dissipation: 520W
    • Continuous Drain Current (ID): 130A
    • Rise Time: 105 ns
    • Fall Time (Typ): 74 ns
    • Pulsed Drain Current-Max (IDM): 520A
    • Power Dissipation-Max: 520W Tc
    • Avalanche Energy Rating (Eas): 760 mJ
    • Gate Charge (Qg) (Max) @ Vgs: 241nC @ 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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