Add to like
Add to project list
  • Manufacturer No:
    IRLI520NPBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
  • SKU:
    2702421
  • Description:
    N-Channel 100 V 8.1A (Tc) 30W (Tc) Through Hole TO-220AB Full-Pak
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:0
  • Qty Unit Price price

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    IRLI520NPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRLI520NPBF
  • SKU:
    2702421
  • Description:
    N-Channel 100 V 8.1A (Tc) 30W (Tc) Through Hole TO-220AB Full-Pak

IRLI520NPBF Details

N-Channel 100 V 8.1A (Tc) 30W (Tc) Through Hole TO-220AB Full-Pak

IRLI520NPBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Voltage - Rated DC: 100V
  • Dual Supply Voltage: 100V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 16V
  • Threshold Voltage: 2V
  • Case Connection: ISOLATED
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Isolation Voltage: 2kV
  • Rise Time: 35 ns
  • Series: HEXFET?
  • Additional Feature: AVALANCHE RATED
  • Width: 4.826mm
  • Fall Time (Typ): 22 ns
  • Nominal Vgs: 2 V
  • Vgs (Max): ±16V
  • Power Dissipation: 27W
  • Continuous Drain Current (ID): 8.1A
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Avalanche Energy Rating (Eas): 85 mJ
  • Current - Continuous Drain (Id) @ 25°C: 8.1A Tc
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Drain to Source Breakdown Voltage: 100V
  • Factory Lead Time: 14 Weeks
  • Element Configuration: Single
  • Part Status: Not For New Designs
  • Published: 2004
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • JEDEC-95 Code: TO-220AB
  • Turn On Delay Time: 40 ns
  • Package / Case: TO-220-3 Full Pack
  • Height: 9.8mm
  • Resistance: 180mOhm
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Turn-Off Delay Time: 23 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4V 10V
  • Current Rating: 8.1A
  • Power Dissipation-Max: 30W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Length: 10.6172mm
  • Rds On (Max) @ Id, Vgs: 180m Ω @ 6A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via