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  • Manufacturer No:
    IRFB4127PBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2704681
  • Description:
    In a Pack of 2, N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF
  • Quantity:
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Inventory:1481
  • Qty Unit Price price
  • 1 $3.706 $3.706
  • 10 $3.669 $36.69
  • 100 $3.632 $363.2
  • 1000 $3.596 $3596
  • 10000 $3.56 $35600

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  • Manufacturer No:
    IRFB4127PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFB4127PBF
  • SKU:
    2704681
  • Description:
    In a Pack of 2, N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF

IRFB4127PBF Details

In a Pack of 2, N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF

IRFB4127PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Threshold Voltage: 5V
  • Packaging: Tube
  • Number of Pins: 3
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Dual Supply Voltage: 200V
  • Published: 2008
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Series: HEXFET?
  • Rise Time: 18 ns
  • Fall Time (Typ): 22 ns
  • Height: 19.8mm
  • Length: 10.668mm
  • Turn-Off Delay Time: 56 ns
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Avalanche Energy Rating (Eas): 250 mJ
  • Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 200V
  • Max Junction Temperature (Tj): 175°C
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Resistance: 20mOhm
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Width: 4.826mm
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Turn On Delay Time: 17 ns
  • Continuous Drain Current (ID): 76A
  • Nominal Vgs: 5 V
  • Power Dissipation: 375W
  • Power Dissipation-Max: 375W Tc
  • Current - Continuous Drain (Id) @ 25°C: 76A Tc
  • Rds On (Max) @ Id, Vgs: 20m Ω @ 44A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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