IRFH7932TRPBFInfineon
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    • 1 $193.555 $193.555
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    • 100 $189.74 $18974
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    • Manufacturer No：
      IRFH7932TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFH7932TRPBF
    • SKU：
      2705022
    • Description：
      MOSFET N-CH 30V 24A PQFN56

    User Guide

    User Guide

    IRFH7932TRPBF Details

    MOSFET N-CH 30V 24A PQFN56

    IRFH7932TRPBF Specification Parameters

    • Part Status: Active
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Factory Lead Time: 12 Weeks
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2008
    • Gate to Source Voltage (Vgs): 20V
    • Dual Supply Voltage: 30V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Height: 939.8μm
    • Case Connection: DRAIN
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn On Delay Time: 20 ns
    • Continuous Drain Current (ID): 24A
    • Turn-Off Delay Time: 23 ns
    • Rise Time: 48 ns
    • Power Dissipation: 3.4W
    • Drain-source On Resistance-Max: 0.0033Ohm
    • Rds On (Max) @ Id, Vgs: 3.3m Ω @ 25A, 10V
    • Power Dissipation-Max: 3.4W Ta
    • Current - Continuous Drain (Id) @ 25°C: 24A Ta 104A Tc
    • RoHS Status: ROHS3 Compliant
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn)
    • Threshold Voltage: 1.8V
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 30V
    • Moisture Sensitivity Level (MSL): 2 (1 Year)
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Length: 6.096mm
    • Drain Current-Max (Abs) (ID): 25A
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 20 ns
    • Width: 5.1mm
    • Series: HEXFET?
    • Package / Case: 8-PowerVDFN
    • Nominal Vgs: 1.8 V
    • JESD-30 Code: R-PDSO-N3
    • Vgs(th) (Max) @ Id: 2.35V @ 100μA
    • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 15V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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