SI2306BDS-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI2306BDS-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      315808
    • Description：
      MOSFET N-CH 30V 3.16A SOT23-3
    • Quantity：
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    Inventory:260
    • Qty Unit Price price
    • 1 $0.115 $0.115
    • 10 $0.113 $1.13
    • 100 $0.111 $11.1
    • 1000 $0.109 $109
    • 10000 $0.1071 $1071

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    • Manufacturer No：
      SI2306BDS-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI2306BDS-T1-E3
    • SKU：
      315808
    • Description：
      MOSFET N-CH 30V 3.16A SOT23-3

    User Guide

    User Guide

    SI2306BDS-T1-E3 Details

    MOSFET N-CH 30V 3.16A SOT23-3

    SI2306BDS-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn)
    • Threshold Voltage: 3V
    • Published: 2008
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 30V
    • FET Type: N-Channel
    • Width: 1.4mm
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 12 ns
    • Power Dissipation: 1.25W
    • Turn On Delay Time: 7 ns
    • Turn-Off Delay Time: 14 ns
    • Length: 3.04mm
    • Resistance: 47mOhm
    • Power Dissipation-Max: 750mW Ta
    • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
    • Rds On (Max) @ Id, Vgs: 47m Ω @ 3.5A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Rise Time: 12 ns
    • Height: 1.02mm
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Series: TrenchFET?
    • Weight: 1.437803g
    • Continuous Drain Current (ID): 3.16A
    • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
    • Current - Continuous Drain (Id) @ 25°C: 3.16A Ta
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