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- Manufacturer No：IRFB4410PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFB4410PBF
- SKU：2706451
- Description：Mosfet, Power; N-ch; Vdss 100V; Rds(on) 8 Milliohms; Id 88A; TO-220AB; Pd 200W; Vf 1.3V
User Guide
User Guide
IRFB4410PBF Details
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 8 Milliohms; Id 88A; TO-220AB; Pd 200W; Vf 1.3V
IRFB4410PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Lead Pitch: 2.54mm
- Voltage - Rated DC: 100V
- Dual Supply Voltage: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Resistance: 10mOhm
- FET Type: N-Channel
- Threshold Voltage: 4V
- Terminal Finish: MATTE TIN OVER NICKEL
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Power Dissipation: 250W
- Drain Current-Max (Abs) (ID): 75A
- Turn-Off Delay Time: 55 ns
- Width: 4.82mm
- Reverse Recovery Time: 38 ns
- Height: 9.017mm
- Continuous Drain Current (ID): 88A
- Vgs(th) (Max) @ Id: 4V @ 150μA
- Avalanche Energy Rating (Eas): 220 mJ
- Current - Continuous Drain (Id) @ 25°C: 88A Tc
- Rds On (Max) @ Id, Vgs: 10m Ω @ 58A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Published: 2004
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 50 ns
- Peak Reflow Temperature (Cel): 250
- Series: HEXFET?
- Turn On Delay Time: 24 ns
- Nominal Vgs: 4 V
- Rise Time: 80ns
- Current Rating: 96A
- Power Dissipation-Max: 200W Tc
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Length: 10.6426mm
- Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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