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- Manufacturer No：IRF9389TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：IRF9389TRPBF
- SKU：2709838
- Description：MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
User Guide
User Guide
IRF9389TRPBF Details
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
IRF9389TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Number of Pins: 8
- Factory Lead Time: 12 Weeks
- REACH SVHC: No SVHC
- Threshold Voltage: 1.8V
- Transistor Element Material: SILICON
- Max Power Dissipation: 2W
- Gate to Source Voltage (Vgs): 20V
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Fall Time (Typ): 15 ns
- FET Feature: Logic Level Gate
- Continuous Drain Current (ID): 4.6A
- FET Type: N and P-Channel
- Rise Time: 14ns
- Vgs(th) (Max) @ Id: 2.3V @ 10μA
- Rds On (Max) @ Id, Vgs: 27m Ω @ 6.8A, 10V
- Base Part Number: IRF9389
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Element Configuration: Dual
- Published: 2008
- Length: 5mm
- Power Dissipation: 2W
- Drain to Source Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Height: 1.5mm
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Series: HEXFET?
- Turn-Off Delay Time: 17 ns
- Pulsed Drain Current-Max (IDM): 34A
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
- Current - Continuous Drain (Id) @ 25°C: 6.8A 4.6A
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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