SI4966DY-T1-E3Vishay Siliconix
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    SI4966DY-T1-E3123
    • Manufacturer No：
      SI4966DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      285630
    • Description：
      MOSFET 20V 7.1A 2W
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    SI4966DY-T1-E3
    • Manufacturer No：
      SI4966DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI4966DY-T1-E3
    • SKU：
      285630
    • Description：
      MOSFET 20V 7.1A 2W

    User Guide

    User Guide

    SI4966DY-T1-E3 Details

    MOSFET 20V 7.1A 2W

    SI4966DY-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 8
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Published: 2008
    • Transistor Element Material: SILICON
    • Length: 5mm
    • Power Dissipation: 2W
    • Operating Temperature: -55°C~150°C TJ
    • Terminal Finish: MATTE TIN
    • Pulsed Drain Current-Max (IDM): 40A
    • Resistance: 25mOhm
    • Fall Time (Typ): 40 ns
    • Rise Time: 40 ns
    • FET Feature: Logic Level Gate
    • Series: TrenchFET?
    • Vgs(th) (Max) @ Id: 1.5V @ 250μA
    • Weight: 186.993455mg
    • Nominal Vgs: 600 mV
    • Base Part Number: SI4966
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Pin Count: 8
    • Terminal Form: GULL WING
    • Gate to Source Voltage (Vgs): 12V
    • Element Configuration: Dual
    • REACH SVHC: Unknown
    • Factory Lead Time: 15 Weeks
    • Max Power Dissipation: 2W
    • Drain to Source Breakdown Voltage: 20V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Operating Mode: ENHANCEMENT MODE
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Width: 3.9878mm
    • Turn On Delay Time: 40 ns
    • Height: 1.5494mm
    • Turn-Off Delay Time: 90 ns
    • FET Type: 2 N-Channel (Dual)
    • Continuous Drain Current (ID): 7.1A
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 25m Ω @ 7.1A, 4.5V
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