IRFB23N20DPBFInfineon
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    IRFB23N20DPBF
    • Manufacturer No：
      IRFB23N20DPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFB23N20DPBF
    • SKU：
      2710803
    • Description：
      MOSFET N-CH 200V 24A TO-220AB

    User Guide

    User Guide

    IRFB23N20DPBF Details

    MOSFET N-CH 200V 24A TO-220AB

    IRFB23N20DPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • Contact Plating: Tin
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 200V
    • Factory Lead Time: 14 Weeks
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Part Status: Not For New Designs
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Current Rating: 24A
    • Vgs (Max): ±30V
    • Width: 4.699mm
    • Fall Time (Typ): 16 ns
    • Turn-Off Delay Time: 26 ns
    • Length: 10.54mm
    • Vgs(th) (Max) @ Id: 5.5V @ 250μA
    • Power Dissipation: 170W
    • Nominal Vgs: 5.5 V
    • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Packaging: Tube
    • Number of Pins: 3
    • Voltage - Rated DC: 200V
    • Dual Supply Voltage: 200V
    • Threshold Voltage: 5.5V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Published: 2000
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Resistance: 100mOhm
    • Continuous Drain Current (ID): 24A
    • Series: HEXFET?
    • Turn On Delay Time: 14 ns
    • Rise Time: 32 ns
    • Lead Free: Contains Lead, Lead Free
    • Pulsed Drain Current-Max (IDM): 96A
    • Height: 4.69mm
    • Current - Continuous Drain (Id) @ 25°C: 24A Tc
    • Avalanche Energy Rating (Eas): 250 mJ
    • Power Dissipation-Max: 3.8W Ta 170W Tc
    • Rds On (Max) @ Id, Vgs: 100m Ω @ 14A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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