BUZ30AInfineon
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    BUZ30A123
    Inventory:27
    • Qty Unit Price price
    • 1 $1.447 $1.447
    • 10 $1.432 $14.32
    • 100 $1.417 $141.7
    • 1000 $1.402 $1402
    • 10000 $1.388 $13880

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    BUZ30A
    • Manufacturer No：
      BUZ30A
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      BUZ30A
    • SKU：
      2669632
    • Description：
      MOSFET N-CH 200V 21A TO-220AB

    User Guide

    User Guide

    BUZ30A Details

    MOSFET N-CH 200V 21A TO-220AB

    BUZ30A Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • Qualification Status: Not Qualified
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 200V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Width: 4.4mm
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Turn On Delay Time: 30 ns
    • Additional Feature: AVALANCHE RATED
    • Turn-Off Delay Time: 250 ns
    • Current Rating: 21A
    • Nominal Vgs: 3 V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Series: SIPMOS?
    • Height: 9.25mm
    • Current - Continuous Drain (Id) @ 25°C: 21A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • RoHS Status: RoHS Compliant
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Lead Free: Contains Lead
    • Lead Pitch: 2.54mm
    • Voltage - Rated DC: 200V
    • Dual Supply Voltage: 200V
    • Published: 2005
    • Element Configuration: Single
    • Length: 10mm
    • Terminal Finish: MATTE TIN
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • JEDEC-95 Code: TO-220AB
    • Rise Time: 70 ns
    • Resistance: 130mOhm
    • Fall Time (Typ): 90 ns
    • Continuous Drain Current (ID): 21A
    • Power Dissipation: 125W
    • Reverse Recovery Time: 180 ns
    • Power Dissipation-Max: 125W Tc
    • Pulsed Drain Current-Max (IDM): 84A
    • Avalanche Energy Rating (Eas): 450 mJ
    • Rds On (Max) @ Id, Vgs: 130m Ω @ 13.5A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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