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  • Manufacturer No:
    IRF7425PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF7425PBF
  • SKU:
    2711181
  • Description:
    MOSFET P-CH 20V 15A 8-SOIC

IRF7425PBF Details

MOSFET P-CH 20V 15A 8-SOIC

IRF7425PBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • DS Breakdown Voltage-Min: 20V
  • Drain Current-Max (Abs) (ID): 15A
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Transistor Application: SWITCHING
  • JESD-30 Code: R-PDSO-G8
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • FET Type: P-Channel
  • Vgs (Max): ±12V
  • Power Dissipation-Max: 2.5W Ta
  • Vgs(th) (Max) @ Id: 1.2V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C: 15A Ta
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 8.2m Ω @ 15A, 4.5V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • Surface Mount: YES
  • Number of Terminations: 8
  • Packaging: Tube
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Published: 2005
  • Drain to Source Voltage (Vdss): 20V
  • Part Status: Discontinued
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • Pulsed Drain Current-Max (IDM): 60A
  • Series: HEXFET?
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • JEDEC-95 Code: MS-012AA
  • Additional Feature: ULTRA LOW RESISTANCE
  • Drain-source On Resistance-Max: 0.0082Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 7980pF @ 15V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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